Researchers from Singapore's NUS and the University of Missouri developed a new all-electric method to measure the spin texture of topological insulators. The researchers say that this method could lead to an easier (and cheaper) methods of developing spintronics devices.
The new work revealed a close relation between the spin texture of topological surface states (TSS) and a new kind of magneto-resistance. The researchers observed the second order nonlinear magneto-resistance in a prototypical 3D TI Bi2Se3 films, and showed that it is sensitive to TSS. In contrast with conventional magneto-resistances, this new magneto-resistance shows a linear dependence on both the applied electric and magnetic fields.