Spintronics-Info: the spintronics experts

Spintronics-Info is a news hub and knowledge center born out of keen interest in spintronic technologies.

Spintronics is the new science of computers and memory chips that are based on electron spin rather than (or in addition to) the charge (used in electronics). Spintronics is an exciting field that holds promise to build faster and more efficient computers and other devices.

Recent spintronics News

Researchers use graphene and CNTs to design an all-carbon spin logic gate

Jun 08, 2017

Researchers from the University of Texas in Dallas developed an all-carbon spin logic design for a switch that could be the basis of carbon spin logic devices.

The design is based on graphene nanoribbons and carbon nanotubes, which in conjunction can be used to create cascaded logic gates that are not physically linked. The communication between the gates happens via an electromagnetic wave (and does not use any physical movement of electrons), it is anticipated that communication will be much quicker - with the potential for terahertz clock speeds. The size of these logic gates will be much smaller than silicon based gates.

New spintronics book: Next Generation Spin Torque Memories

This book discusses spin transfer torque (STT) based devices, circuits and memories. The book details the basic concepts and device physics, advanced STT applications and the outlook for the technology.

Other topics featured in the book include the architectures, performance parameters, fabrication, and the prospects of STT based devices - in addition to presenting a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices.

Researchers demonstrate an inverted magnetocapacitance effect

Jun 04, 2017

Researchers from Brown University in collaboration with researchers from Japan developed a way to induce an inverted magnetocapacitance effect - this is a new phenomenon that could benefit future spintronics devices. The researchers say that Magnetocapcitos could be useful to make magnetic sensors and adding an inverse effect may allow for greater design freedom.

The crystal structure of Fe3O4 and Fe electrodes

To achieve this effect, the researchers used different materials to build a quantum tunneling junction. The image above shows two electrodes - made from Fe3O4 and Fe. The patterns indicate that Fe3O4 has the inverse spinel structure with the same crystal orientation of the MgO substrate, while Fe takes polycrystalline structure.

Organic-inorganic hybrid perovskites are promising spintronics materials

May 30, 2017

Researchers from the University of Utah demonstrated that organic-inorganic hybrid perovskites are a promising material class for spintronics applications. These perovskite materials feature two contradictory properties - easily controlled electron spin and long spin lifetime (up to a nanosecond). This is a unique combination of two highly sought after properties for spintronics devices.

Hybrid organic-inorganic perovskite spintronics research (University of Utah)

The specific material used in this research is the hybrid perovskite methyl-ammonium lead iodine (CH3NH3PbI3). In their study, a thin film of this material was placed in front of an ultrafast laser that was used to set the electron's spin orientation and also observe the spin precession.

Electron spin can be used to reduce contact resistance in graphene electronics

May 22, 2017

Researchers from the NUS discovered that manipulating the electron spin lowers the contact resistance in graphene electronics.

Spin filtering in metal-graphene interfaces image

Graphene is an excellent conductor, but metal-graphene interfaces suffer from large electrical resistance. The researchers have shown that edga-contacted device geometries in metallic-graphene interfaces feature some of the lowest contact resistances reported to date - significantly lower than in surface-contracted interfaces. The researchers explain that this is due to the different behavior of electron spins in these geometries.

Researcher use a quantum-dot material to continuously read out the state of a single electron spin

May 19, 2017

Researchers from the Institut Néel in France and the Karlsruhe Institute of Technology in Germany developed a non-destructive method to continuously read out the state of a single electron spin. The technique is based on the exchange interaction between the spin and a nearby readout quantum dot.

TbPc2 spin transistor render

The quantum-dot material is made from a single terbium-two phthalocyanine ligands (Tb-Pc2) molecular magnet embedded in transistor geometry. The QD is cooled down to 40 mK, and at that temperature it can be used to measure electron transport through the ligands, which behave as a readout quantum dot.

NVE reports its financial results for Q1 2017

May 04, 2017

Spintronics developed NVE Corporation reported its financial results for Q1 2017. Revenues reached $6.85 million (up 12% from Q1 2016), due to 23% increase in product sales (offset by 49% decrease in contract R&D revenues). net income increased 16% to $3.03 million.

NVE recently introduced three new and improved products; a low-field angle sensor, a new spintronics mangetometer sensor (which is the world's smallest high-performance integrated circuit analog sensor) and the world's smallest high performance isolated network transceiver.