A research team led by Prof. Kim Jun Sung in the Center for Artificial Low Dimensional Electron Systems within the Institute for Basic Science (IBS, South Korea) and Physics Department at Pohang University of Science and Technology (POSTECH, South Korea) has found a new magnetotransport phenomenon, in the magnetic semiconductor Mn3Si2Te6. The group found that the magnitude of change in resistance can reach as much as a billion-fold under a rotating magnetic field. This unprecedented shift of resistance depending on magnetic field angle is called colossal angular magnetoresistance (CAMR).
A key challenge in spintronics is finding an efficient and sensitive way to electrically detect the electronic spin state. For example, the discovery of giant magnetoresistance (GMR) in the late 1980s, allowed for such functionality. In GMR, a large change in electrical resistance occurs under the magnetic field depending on parallel or antiparallel spin configurations of the ferromagnetic bilayer. The discovery of GMR has led to the development of hard-disk drive technology, which is technically the first-ever mass-produced spintronic device. Since then, discoveries of other related phenomena, including colossal magnetoresistance (CMR) which occurs in the presence of a magnetic field, have advanced our understanding of the interplay between spin and charge degrees of freedom and served as a foundation of emergent spintronic applications.