Researchers report new method for restoring magnetism in thin films
Researchers at Osaka University have reported a technique for recovering magnetism in a degraded spintronics device. This method can be applied to improve the robustness of next-generation semiconductor memory.
Spintronics exploits the spin (and charge) of electrons to process and store memory, which is achieved practically by stacking layers of thin material films that behave differently under the influence of a magnetic field. “These devices can be non-volatile, low-power, and robust, but the manufacturing process can cause their magnetic properties to deteriorate,” explains Tomohiro Koyama, lead author of the study. The thin films required for these devices are often formed via sputtering, in which atoms are extracted and deposited onto a substrate. This process, however, can often lead to the magnetic layer becoming oxidized, spoiling its magnetic properties.