Spintronics-Info: the spintronics experts

Researchers from the University of Groningen developed a two-dimensional spin transistor, in which spin currents were generated by an electric current through graphene. The device also include a monolayer transition metal dichalcogenide (TMD) that is placed on the graphene to induce charge-to-spin conversion.

Graphene is an excellent spin transporter, but spin-orbit coupling is required to create or manipulate spins. The interaction is weak in the graphene carbon atoms, but now the researchers have shown that adding the TMD layer increases the spin-orbit coupling.

The Sofja Kovalevskaja Award, Germany's most highly-endowned research award for early-research scientists, went this year to Dr Angelo Di Bernardo from Cambridge University. Dr. Angelo was awarded with 1.65 million Euros and will move to the University of Konstant in which he will establish a research hub in the field of superconducting spintronics.

Dr. Angelo's project that won the award is dealing with superconducting spintronics with oxides and 2D materials.

Researchers from Spain's ICN2, in collaboration with Imec and K.U. Leuven have developed a modified graphene-based nanodevice fabrication technique that can increase the spin lifetime and relaxation length by up to three times.

The researchers used CVD-made graphene grown on a platinum foil. By optimizing several standard processes, the researchers managed to reduce the impurity level of the graphene.

Researchers from two FLEET universities in Australia, RMIT and UNSW, collaborated in a theoretical–experimental project that discovered a previously unseen mode of giant magneto-resistance (GMR) in 2D Fe₃GeTe₂ (FGT). This surprising result suggests a different underlying physical mechanisms in vdW hetero-structures.

The research shows that vdW materials (2D material) could offer higher functionaly cmopared to traditional spintronic approaches.

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Researchers from the University of Tokyo have developed a spintronics device that can quickly and efficiently magnetize - which they say is between one and two orders of magnitude more power efficient than current spintronics device.

The researchers used a ferromagnetic semiconductor material called gallium manganese arsenide (GaMnAs) - the magnetization of which can be fully reversed with the application of very small current densities.

Researchers RIKEN in collaboration with several other Universities, developed an organic solid-state spin filtering device. The device is based on a thin layer of artificial molecular motors.

The researcher explain that the artificial molecular motors demonstrate four times chirality inversion by light irradiation and thermal treatments during the 360-degree molecular rotation. This means that the spin-polarization direction of electrons that pass through the molecular motors are switched by light irradiation or thermal treatments.