Spintronics-Info is a news hub and knowledge center born out of keen interest in spintronic technologies.
Spintronics is the new science of computers and memory chips that are based on electron spin rather than (or in addition to) the charge (used in electronics). Spintronics is an exciting field that holds promise to build faster and more efficient computers and other devices.
Researchers from Spain's ICN2, in collaboration with Imec and K.U. Leuven have developed a modified graphene-based nanodevice fabrication technique that can increase the spin lifetime and relaxation length by up to three times.
The researchers used CVD-made graphene grown on a platinum foil. By optimizing several standard processes, the researchers managed to reduce the impurity level of the graphene.
Researchers from two FLEET universities in Australia, RMIT and UNSW, collaborated in a theoretical–experimental project that discovered a previously unseen mode of giant magneto-resistance (GMR) in 2D Fe3GeTe2 (FGT). This surprising result suggests a different underlying physical mechanisms in vdW hetero-structures.
The research shows that vdW materials (2D material) could offer higher functionaly cmopared to traditional spintronic approaches.
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Researchers from the University of Tokyo have developed a spintronics device that can quickly and efficiently magnetize - which they say is between one and two orders of magnitude more power efficient than current spintronics device.
The researchers used a ferromagnetic semiconductor material called gallium manganese arsenide (GaMnAs) - the magnetization of which can be fully reversed with the application of very small current densities.
Researchers RIKEN in collaboration with several other Universities, developed an organic solid-state spin filtering device. The device is based on a thin layer of artificial molecular motors.
The researcher explain that the artificial molecular motors demonstrate four times chirality inversion by light irradiation and thermal treatments during the 360-degree molecular rotation. This means that the spin-polarization direction of electrons that pass through the molecular motors are switched by light irradiation or thermal treatments.
Researchers from the University of Glasgow together with European partners developed a new method to transfer spin information between layers of spintronic materials - basically enabling the development of 3D magnetic structures.
This discovery is based on chiral spin interaction. The researchers were able to stablize these interactions within a magnetic layer and, for the first time, extend these types of interactions to other layers.
Researchers from the Moscow Institute of Physics and Technology, in collaboration with researchers from Germany and the Netherlands have developed a new memory technology they call optically-assisted MRAM which is based on changing the spin state via THz pulses.
The researchers say that the new technique is extremely efficient (the power required to switch a "bit" will be a thousand times smaller compared to current MRAM devices) and fast.