Orbital currents enable the first purely orbitronic device for future memory technologies
A research team led by Johannes Gutenberg-University Mainz, which also included Forschungszentrum Jülich and JARA, The University of Tokyo, HZB and Institut Polytechnique de Paris, has demonstrated a purely orbitronic device concept in which orbital currents are used directly, without conversion into spin currents, to generate exceptionally large magnetoresistance signals in antiferromagnetic heterostructures.
Building on recent predictions that orbital current effects can exceed spin-current effects by orders of magnitude, the team shows that these giant orbital currents can be harnessed in practice by replacing conventional spin-dominated magnets with magnets dominated by orbital angular momentum (OAM). This work, led by Dr. Christin Schmitt in the group of Professor Mathias Kläui at Johannes Gutenberg University Mainz (JGU), was carried out with more than twenty international collaborators.