Korean researchers managed to create a flexible film suitable for spintronics applications

Researchers from Korea discovered that making a thin film of multiferroic material bismuth ferrite improved the material's electric and magnetic properties. Bismuth Ferrite works as a spintronics material at room temperature, and this film is flexible - which could lead to flexible spintronics devices.

To create the film, the researchers used bismuth ferrite nanoparticles (about 24nm in size) mixed in a polymer solution and then dried - which resulted in a flexible and slightly-stretchable film. The thin film kept its improved electric and magnetic properties even when bent into a cylinder.

Researchers show SiC is a promising spintronics material

Two independent studies published recently suggest that Silicon Carbide (SiC) is a promising material for atomic-scale spintronics. Both reported their results in Nature Materials.

The first study (by researchers from the University of Chicago, the University of California, Linköping University, and the Japan Atomic Energy Agency) shows that individual electron spins in high-purity monocrystalline 4H-SiC can be isolated and coherently controlled. These states exhibit exceptionally long ensemble Hahn-echo spin coherence times, exceeding 1ms.

Berkeley Lab Reports on Electric Field Switching of Ferromagnetism at Room Temp

Researchers from the U.S. Department of Energy (DOE)’s Lawrence Berkeley National Laboratory (Berkeley Lab) and Cornell University managed to use an electric field to reverse the magnetization direction in a multiferroic spintronic device at room temperature.

Berkeley Lab Electric-Field Switching of Ferromagnetism render

The researchers showed that 180-degree magnetization switching in the multiferroic bismuth ferrite can be achieved at room temperature with an external electric field when the kinetics of the switching involves a two-step process. They say that this demonstration, which runs counter to conventional scientific wisdom, points a new way towards spintronics applications.

Reading and controlling nuclear spin on plastic electronic devices at room temperature

Researchers from the University of Utah have managed to control and read spin information at room temperatures. For this experiment, they used an orange OLED device.

The researchers were able to read the nuclear spins of two hydrogen isotops: a single proton and deuterium (a proton, neutron and electron). When the researchers controlled the spin, they controlled the electrical current in the device.

Heusler alloys shown to have 100% spin polarization

Researchers from the Johannes Gutenberg University Mainz (JGU) managed to directly observe the 100% spin polarization of a Heusler compound. A Heusler alloy is made from several metallic elements arranged in a lattice structure, and the researchers used the compound Co2MnSi. This paves the way towards using Heusler materials for spintronics devices.

Spin polarization is the degree of parallel orientation of the spins of the electrons that transport the charge. The ideal spintronics material has the maximum possible spin polarization. The Heusler alloy used in this material was shown to have an almost complete spin polarization at room temperature.

New thermoelectric spintronics devices can turn heat into electricity

Researchers from the University of Utah developed Spintronics devices that can convert heat into electricity. Those thermoelectric devices work at room temperature and don't require a continuous external magnetic field.

Those devices (that can convert even minute heat to electricity) function on a concept known as spin-caloritronics, in which thermal and electrical transport occurs in different parts of the device.

Researchers manage to switch robust ferromagnetism close to room temperature by using low electric fields

Researchers from Germany, France and the UK managed to switch on and off robust ferromagnetism close to room temperature by using low electric fields. They hope such work will lead to applications in low-power Spintronics devices.

The researchers used a ferroelectric BaTiO3 substrate and covered it with a thin film of magnetic FeRh. They then demonstrated how the magnetic order of the sample changes dramatically, when a moderate external electric field is applied

Magnetic graphene at room temperature demonstrated

Researchers from UC Berkeley, Florida International University (FIU) and the Georgia Institute of Technology demonstrated for the first time the presence of magnetic properties in graphene nanostructures at room temperature. This could lead towards Spintronics applications.

To achieve this they functionalized the graphene with nitrophenyl. The researchers thus confirmed the presence of magnetic order in nanoparticle-functionalized graphene. The graphene was epitaxially grown at Georgia Tech, chemically functionalized at UC Riverside and studied at FIU and UC Berkeley.

Antiferromagnetic Tetragonal CuMnAs hold promise for future Spintronics and nanoelectronic devices

Researchers from the University of Nottingham are studying a new antiferromagnetic spintronic material - tetragonal CuMnAs. They say that this new material enables new device structure designs that combine Spintronic and nanoelectronic functionality - at room temperature.

An antiferromagnet is a material in which electron spin on adjacent atoms cancel each other out - and so it was considered unsuitable for Spintronics applications. However it was recently discovered that these materials have a physical phenomena that can enable memory and sensing applications.

Manganese and Gallium Nitride given a second chance as Spintronics materials

A combination of Manganese and Gallium Nitride was once a promising spintronics material, but it was later abandoned when it was found that these two materials aren't harmonious. But now researchers from Ohio university (in collaboration with Argentinian and Spanish researchers) developed a way to incorporate a uniform layer (at least on the surface) from the materials.

The researchers used the nitrogen polarity of gallium nitride (old experiments used the gallium polarity) to attach to the manganese, and they also heated the sample which prevents the manganese atoms from "floating" on the outer layer of gallium atoms and instead made the connection that created the manganese-nitrogen bond.