Researchers from Japan and Vietnam report an iron-doped ferromagnetic semiconductors at room temperature. They say this is the same time that a ferromagnetic semiconductor is demonstrated, which is seen as a promising spintronic device material.

The researchers say that current theory predicted that a type of semiconductor known as "wide band gap" would be strongly ferromagnetic, and most research focused on that approach. But the researchers chose a narrow-gap semconductor (both indium arsenide and gallium antimonide were chosen) as the host semiconductor, which enabled them to obtain ferromagnetism and conserve it at room temperature by adjusting doping concentrations.