Researchers discover unconventional magnetism at the surface of Sr2RuO4

The attractive properties of Sr2RuO4, like its ability to carry lossless electrical currents and magnetic information simultaneously, make it a material with great potential for the development of future technologies like superconducting spintronics and quantum electronics. An international research team, led by scientists at the University of Konstanz, was recently able to answer one of the most interesting open questions on Sr2RuO4: why does the superconducting state of this material exhibit some features that are typically found in materials known as ferromagnets, which are considered being antagonists to superconductors?

New type of magnetism unveiled in an iconic material imageSpin polarized muon particles (red spheres with arrows) probing a new form of magnetism in the perovskite superconductor Sr2RuO4. Credit: Konstanz University

The team has found that the material hosts a new form of magnetism, which can coexist with superconductivity and exists independently of superconductivity as well.

Researchers demonstrate programmable dynamics of exchange-biased domain wall via spin-current-induced antiferromagnet switching

Researchers from Daegu Gyeongbuk Institute of Science and Technology (DGIST) in Korea have demonstrated a novel route to tune and control the magnetic domain wall motions employing combinations of useful magnetic effects inside very thin film materials. The research offers a new insight into spintronics and a step towards new ultrafast, ultrasmall, and power-efficient IT devices.

The new study demonstrates a new way to handle information processing using the movement of the magnetic states of the thin film device. It takes advantage of some unusual effects that occur when materials with contrasting types of magnetic material are squashed together. The research focuses on a device that combines ferromagnetic and antiferromagnetic materials, in which the directions of electron spins align differently within the respective magnetic materials.

New 2D magnet that operates at room temperature could boost spintronic memory and quantum computing

Researchers from Berkeley Lab, UC Berkeley, UC Riverside, Argonne National Laboratory, Nanjing University and the University of Electronic Science and Technology of China, have developed an ultrathin magnet that operates at room temperature. This development could lead to new applications in computing and electronics - such as high-density, compact spintronic memory devices - and new tools for the study of quantum physics.

"We're the first to make a room-temperature 2D magnet that is chemically stable under ambient conditions," said senior author Jie Yao, a faculty scientist in Berkeley Lab's Materials Sciences Division and associate professor of materials science and engineering at UC Berkeley. "This discovery is exciting because it not only makes 2D magnetism possible at room temperature, but it also uncovers a new mechanism to realize 2D magnetic materials," added Rui Chen, a UC Berkeley graduate student in the Yao Research Group and lead author on the study.

Gate-controlled magnetic phase transition in a van der Waals magnet

An international collaboration led by RMIT has achieved record-high electron doping in a layered ferromagnet, causing magnetic phase transition with significant promise for future electronics.

Control of magnetism (or spin directions) by electric voltage is vital for developing future, low-energy high-speed nano-electronic and spintronic devices, such as spin-orbit torque devices and spin field-effect transistors. Ultra-high-charge, doping-induced magnetic phase transition in a layered ferromagnet allows promising applications in antiferromagnetic spintronic devices.

Researchers find a key cause of energy loss in spintronic materials

A study led by researchers at the University of Minnesota Twin Cities has found a property of magnetic materials that may enable engineers to develop more efficient spintronic devices in the future.

One of the main obstacles to developing better spintronic devices is an effect called “damping,” which is where the magnetic energy essentially escapes from the materials, making them less efficient. Traditionally, scientists have ascribed this property to the interaction between the electron’s spin and its motion. However, the team led by the University of Minnesota has proven that there is another factor – magnetoelastic coupling, i.e. the interaction between electron spin or magnetism and sound particles.

New material opens new opportunities for future spintronics-based magnetic memory devices

Researchers from Seoul National University, Pohang University of Science and Technology, Korea Atomic Energy Research Institute and the Center for Quantum Materials in Korea have designed a prototype of a non-volatile magnetic memory device entirely based on a nanometer-thin layered material, which can be tuned with a tiny current. This finding opens up a new window of opportunities for future energy-efficient magnetic memories based on spintronics.

The choice of magnetic material and device architecture depends on the fact that non-volatile memory technologies have to guarantee safe storage, but also reliable reading and writing access. Hard magnets are perfect for long-term memory storage, because they magnetize very strongly and are difficult to demagnetize. On the contrary, soft magnets are desirable for adding new information to the memory device, because their magnetization can be easily reversed during the writing process. Put simply, ideal magnetic materials can be kept at a hard magnetic state to ensure the stability of the stored information, but be soft on demand.

Researchers develop a simple method to manipulate the magnetization angle of magnetite

Researchers from the Tokyo University of Science have developed an all-solid redox device composed of magnetite (Fe3O4) thin film and a solid electrolyte containing lithium ions that successfully manipulated the magnetization angle at room temperature.

Magnetite magnetization manipulation (Tokyo University of Science)

The researchers say they have developed a surprisingly simple yet efficient strategy to manipulate the magnetization angle in magnetite, a typical ferromagnetic material. This magnetization rotation is caused by the change of spin-orbit coupling due to electron injection into a ferromagnet. The new approach leverages a reversible electrochemical reaction.

Researchers discover that current flow in a ferromagnetic conductor can produce a magnetic-moment directed spin polarization

Researchers from NYU and IBM Research have created a spintronics device from a ferromagnetic conductor and discovered that current flow in the conductor can produce a spin polarization that is in a direction set by its magnetic moment.

This discovery means that magnetic moment direction can be set in just about any desired direction to then set the spin polarization - this is not possible using the contours of the spin Hall effect in non-magnetic heavy metals.

Researchers discover an unseen mode of GMR in 2D materials

Researchers from two FLEET universities in Australia, RMIT and UNSW, collaborated in a theoretical–experimental project that discovered a previously unseen mode of giant magneto-resistance (GMR) in 2D Fe3GeTe2 (FGT). This surprising result suggests a different underlying physical mechanisms in vdW hetero-structures.

The research shows that vdW materials (2D material) could offer higher functionaly cmopared to traditional spintronic approaches.

Researchers use thin GaMnAs film to create an extremely efficient spintronics device

Researchers from the University of Tokyo have developed a spintronics device that can quickly and efficiently magnetize - which they say is between one and two orders of magnitude more power efficient than current spintronics device.

Magnetization reverse in GaMnAs (UTokyo)

The researchers used a ferromagnetic semiconductor material called gallium manganese arsenide (GaMnAs) - the magnetization of which can be fully reversed with the application of very small current densities.