Researchers develop spin-selective memtransistors with magnetized graphene
An interdisciplinary collaboration of researchers from South Korea and Singapore recently reported a significant advance towards achieving spin-polarized van der Waals heterostructures. The team designed a spin-selective memtransistor device using single-layer graphene deposited on the antiferromagnetic van der Waals magnetic insulator CrI3.
Transport measurements combined with first-principles calculations provide unprecedented insights into tailoring reciprocal magnetic proximity interactions to generate and probe proximitized magnetism in graphene at room temperature.