Researchers develop a new technique for ultra-fast teraherz spintronics switching

Researchers from the University of Tokyo developed a method to partially switch between specific magnetic states at Thz frequencies. The researchers used short high-frequency pulses of terahertz radiation to flip the electron spins in ferromagnetic manganese arsenide (MnAs).

Tokyo University TeraHerz Spintronics MnAsSuch techniques have been attempted before, but the magnitude change in the magnetization of the MnAs was too small - but in this current research a 20% change was achieved. Such a technique could be used in the future to create Thz spintronics devices - one that operate at a much faster rate compared to today's Ghz electronics devices.

Iron Oxide was found to be a promising magnon spintronics material

Researchers from the Johannes Gutenberg University Mainz, in cooperation with Utrecht University and the Center for Quantum Spintronics (QuSpin) at the Norwegian University of Science and Technology (NTNU), demonstrated that the antiferromagnetic material iron oxide is a promising magnon spintronics material.

An electrical current in a platinum wire creates a magnetic wave in the antiferromagnetic iron oxide

Iron oxide is a cheap material (it is the main material in rusted iron) that was shown to be able to carry magnon over long distances, with low access heat. For their demonstration, the researchers used used platinum wires on top of the insulating iron oxide. An electric current was introduced which led to the creation of magnons in the iron oxide.

Researchers from MIPT design a new spin diode

Researchers from the Moscow Institute of Physics and Technology (MIPT) designed a new spin diode, using two kinds of antiferromagnetic materials. The researchers say that this new design features triple the frequencies range under which the device can rectify alternating currents, while keeping the same sensitivity as semiconductor-based diodes.

Spin Diode Design (MIPT)

The spin diode, in this new design, is placed between the two materials, and by adjusting the orientation of their antiferromagnetic axes, it is possible to change the resistance and the resonant frequency of the diode.

Researchers discover a metallic antiferromagnet with a large magneto-optic Kerr effect

Researchers from the NIST in the US and the University of Tokyo have discovered a metallic antiferromagnet (Mn3Sn) that exhibits a large magneto-optic Kerr (MOKE) effect, despite a vanishingly small net magnetization at room temperature.

MOKE measurements in non-collinear antiferromagnets

Compared to ferromagnetic materials, metallic antiferromagnets allow for faster dynamics and more densely packed spintronic devices due to the weak interactions between antiferromagnetic cells. The researchers believe that such materials hold promise for future antiferromagnetic spintronic devices, where the magnetic state could transduced optically and switched either optically or by applying current.

Will antiferromagnetic pave the way to spintronics memory?

Researchers from the University of Nottingham discovered a new antiferromagnetic material that may be the basis of future spintronics devices. The new material is copper manganese arsenide (CuMnAs), has an advantage of ferromagnetic materials - in which strong magnetic fields can erase the encoded information.

The problem with antiferromagnets is that manipulating the magnetic ordering of antiferromagnets is quite difficult - because the spins of neighboring electrons point in opposite directions which means it is not easy to change them with external magnetic fields.

Antiferromagnetic Tetragonal CuMnAs hold promise for future Spintronics and nanoelectronic devices

Researchers from the University of Nottingham are studying a new antiferromagnetic spintronic material - tetragonal CuMnAs. They say that this new material enables new device structure designs that combine Spintronic and nanoelectronic functionality - at room temperature.

An antiferromagnet is a material in which electron spin on adjacent atoms cancel each other out - and so it was considered unsuitable for Spintronics applications. However it was recently discovered that these materials have a physical phenomena that can enable memory and sensing applications.

New magnetic switching technology will enable terahertz memories

Researchers from the US Ames Laboratory in collaboration with Iowa State University and Greece's University of Crete have developed a new way to switch magnetism that is at least 1000 times faster than current technologies. The new technology uses all-optical quantum methods. Magnetic memory switching is used in hard drives and MRAM and this new technology will enable terahertz (or faster) memories.

The new switching technology uses short laser pulses to change the magnetic structure (from anti-ferromagnetic to ferromagnetic ordering) in colossal magnetoresistive materials (CMRs). Current technologies use thermal magnetic switching, which makes it difficult to exceed gigahertz speeds. CMR materials however do not require heat to trigger switching. Those materials however are highly responsive to external magnetic fields. In these materials switching occurs by manipulating spin and charge quantum mechanically.