Jul 09, 2017

Researchers from Chalmers University developed a new graphene-based room-temperature spin field-effect transistor (G-FET).

Graphene spintronics FETs image

As part of the research, it was demonstrated that the spin characteristics of graphene can be electrically regulated in a controlled way, even at an ambient temperature. This structure is not only useful to make spin-logic devices - it can also be used to integrate device-level magnetic memory (MRAM) elements.

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