Graphene

Researchers at the National University of Singapore (NUS), University of Science and Technology of China and the National Institute for Materials Science in Japan have developed a way to induce and directly quantify spin splitting in two-dimensional materials. 

Using this concept, they have experimentally achieved large tunability and a high degree of spin-polarization in graphene. This research achievement can potentially advance the field of two-dimensional (2D) spintronics, with applications for low-power electronics.

Researchers from Brown University, Michigan State University, Columbia University, Sandia National Laboratories in the U.S, Japan's National Institute for Materials Science and Austria's University of Innsbruck have observed low-energy collective excitations in twisted bilayer graphene near the magic angle, using a resistively detected electron spin resonance technique. 

For many years, scientists have been trying to directly manipulate the spin of electrons in 2D materials like graphene. Doing so could yield key advances in the world of 2D electronics, a field where super-fast, small and flexible electronic devices carry out computations based on quantum mechanics. Standing in the way is that the typical way in which scientists measure the spin of electrons — an essential behavior that gives everything in the physical universe its structure — usually doesn’t work in 2D materials. This makes it incredibly difficult to fully understand the materials and propel forward technological advances based on them. But a team of scientists led by Brown University researchers believe they now have a way around this longstanding challenge. 

The discovery of new quantum materials with magnetic properties could pave the way for ultra-fast and considerably more energy-efficient computers and mobile devices. So far, however, these types of materials have been shown to work only at extremely cold temperatures. Now, for the first time, a research team at Chalmers University of Technology, Lund University and Uppsala University in Sweden has created a two-dimensional (2D) magnetic quantum material that works at room temperature.

Today’s rapid expansion of information technology (IT) is generating massive amounts of digital data that needs to be stored, processed and communicated. This requires energy, and IT is projected to account for over 30% of the world’s total energy consumption by 2050. To solve this problem, the research community is entering a new paradigm in materials science. The research and development of 2D quantum materials is opening new doors for sustainable, faster and more energy-efficient data storage and processing in computers and mobiles.

A new study, coordinated by ICN2 group leaders and ICREA professors Prof. Stephan Roche and Prof. Sergio O. Valenzuela, and by Prof. Hyunsoo Yang from the National University of Singapore, examined the current developments and challenges in regards to MRAM, and outlined the opportunities that can arise by incorporating two-dimensional material technologies. It highlighted the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.

The research was carried out by a collaboration of various members of the Graphene Flagship project consortium, including various institutes of the Centre national de la recherche scientifique (CNRS, France), Imec (Belgium), Thales Research and Technology (France), and the French Atomic Energy Commission (CEA), as well as key industries such as Samsung Electronics (South Korea) and Global Foundries (Singapore).

University of Nebraska-Lincoln's scientist Christian Binek and University at Buffalo's Jonathan Bird and Keke He have teamed up to develop the first magneto-electric transistor.

Along with curbing the energy consumption of any microelectronics that incorporate it, the team's design could reduce the number of transistors needed to store certain data by as much as 75%, said Nebraska physicist Peter Dowben, leading to smaller devices. It could also lend those microelectronics steel-trap memory that remembers exactly where its users leave off, even after being shut down or abruptly losing power.

Researchers at The University of Manchester and Japan's National Institute for Materials Science seem to have made a significant step towards quantum computing, demonstrating step-change improvements in the spin transport characteristics of nanoscale graphene-based electronic devices.

The team used monolayer graphene encapsulated by another 2D material (hexagonal boron nitride) in a so-called van der Waals heterostructure with one-dimensional contacts. This architecture was reported to deliver an extremely high-quality graphene channel, reducing the interference or electronic ‘doping’ by traditional 2D tunnel contacts.

A research team from Brown University has found a surprising new phenomenon that can arise in 'magic-angle graphene' - two sheets of graphene that are stacked together at a particular angle with respect to each other, giving rise to various fascinating behaviors. In a recent research, the team showed that by inducing a phenomenon known as spin-orbit coupling, magic-angle graphene becomes a powerful ferromagnet.

"Magnetism and superconductivity are usually at opposite ends of the spectrum in condensed matter physics, and it's rare for them to appear in the same material platform," said Jia Li, an assistant professor of physics at Brown and senior author of the research. "Yet we've shown that we can create magnetism in a system that originally hosts superconductivity. This gives us a new way to study the interplay between superconductivity and magnetism, and provides exciting new possibilities for quantum science research."

Researchers from Harvard University and Japan's National Institute for Materials Science have demonstrated a new way to measure the properties of spin waves in graphene.

A charge sensor measuring the cost of electrons surfing on the spin wave (green wavy lines) (Credit: Yacoby Lab/ Harvard SEAS)

Spin waves, a change in electron spin that propagates through a material, could fundamentally change how devices store and carry information. These waves, also known as magnons, don’t scatter or couple with other particles. Under the right conditions, they can even act like a superfluid, moving through a material with zero energy loss.

Researchers at CIC nanoGUNE BRTA in Spain and University of Regensburg in Germany have recently demonstrated spin precession at room temperature in the absence of a magnetic field in bilayer graphene. In their paper, the team used 2D materials to realize a spin field-effect transistor.

Sketch of the spin field-effect transistor. Image from article

Coherently manipulating electron spins at room temperature using electrical current is a major goal in spintronics research. This is particularly valuable as it would enable the development of numerous devices, including spin field-effect transistors. In experiments using conventional materials, engineers and physicists have so far only observed coherent spin precession in the ballistic regime and at very low temperatures. Two-dimensional (2D materials), however, have unique characteristics that could provide new control knobs to manipulate spin procession.

Two recent studies by a collaborative team of scientists from two NCCR MARVEL labs have identified a new type of defect as the most common source of disorder in on-surface synthesized graphene nanoribbons (GNRs).

Combining scanning probe microscopy with first-principles calculations allowed the researchers to identify the atomic structure of these so-called "bite" defects and to investigate their effect on quantum electronic transport in two different types of graphene nanoribbon. They also established guidelines for minimizing the detrimental impact of these defects on electronic transport and proposed defective zigzag-edged nanoribbons as suitable platforms for certain applications in spintronics.