Researchers from Spain's ICN2, in collaboration with Imec and K.U. Leuven have developed a modified graphene-based nanodevice fabrication technique that can increase the spin lifetime and relaxation length by up to three times.

ICN2 graphene device spin lifetime photo

The researchers used CVD-made graphene grown on a platinum foil. By optimizing several standard processes, the researchers managed to reduce the impurity level of the graphene.

The researchers demonstrate a spin signal measured across a 30 µm long channel with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths of up to 9 µm in monolayer graphene on SiO2/Si substrates. The researchers say that these spin parameters are thee highest values for any form of graphene on SiO2/Si ever tested.

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