NVE Corporation today announced the introduction of
the AAT001-10E TMR Angle Sensor, NVEâs first commercial sensor to use
Tunneling Magnetoresistance (TMR), which produces an even âmore giantâ
signal than Giant Magnetoresistance.
Also known as Spin-Dependent Tunneling (SDT), Magnetic Tunnel
Junction (MTJ), or Tunneling Magnetic Junction (TMJ), Tunneling
Magnetoresistance is a spintronic quantum effect that produces a
dramatic resistance change in a normally insulating layer, depending on
the magnetic field and thus the predominant electron spin in a free
layer. The new device has four TMR elements configured as an angle
sensor with full quadrature sine and cosine outputs.
The parts come in an ultraminiature 2.5 millimeter by 2.5 millimeter
six-pin TDFN package. In typical operation, an external bar or
split-pole magnet provides a saturating magnetic field of 30 to 200
Oersteds in the plane of the sensor.
TMR produces a very large signal with no amplification for
exceptional precision, wide air-gap tolerance, and low power
consumption due to high element resistance. The AAT001-10E is ideal for
applications such as rotary encoders, automotive rotary sensors, motor
shaft position sensors, and knob position sensors.
Datasheets and more information are available at www.GMRsensors.com
or www.nve.com. Available now, AAT001-10E angle sensors are priced at
$1.94 each in 1,000-piece quantities. Split-pole ferrite magnets for
use with the sensors are available and priced at $1.15 each in
1,000-piece quantities. Customers can also use their own magnets.