A research team, led by Dr. Kim Kyoung-Whan at the Center for Spintronics of the Korea Institute of Science and Technology (KIST), has proposed a new principle which could give a boost to spin memory devices.
Conventional memory devices are classified into volatile memories, such as RAM, that can read and write data quickly, and non-volatile memories, such as hard-disk, on which data are maintained even when the power is off. In recent years, related academic and industrial fields have been working to accelerate the development of next-generation memory that is fast and capable of maintaining data even when the power is off.