PatentsNVE got a new "spintronic biosensor technology" patent
NVE Notified of Two Spintronics Patent GrantsThe first patent is number 7,390,584 and titled "Spin dependent tunneling devices having reduced topological coupling." Spin-dependent tunnel junctions, also known as magnetic tunnel junctions or tunneling magnetic junctions, are spintronic structures that can form the heart of spintronic magnetoresistive random access memory technology, commonly known as MRAM. The second patent is number 7,391,091 and titled "Magnetic particle flow detector," and is related to spintronic biosensor technology, which could be used in laboratory-on-a-chip systems.
NVE Notified of Patent Grant for Superparamagnetic DevicesSuperparamagnetism is the magnetic state of a material between highly ordered parallel spins (ferromagnetism) and randomly ordered spins (paramagnetism). The superparamagnetic effect occurs in ferromagnetic structures smaller than a critical value or at temperatures higher than a critical temperature. Superparamagnetism can improve the accuracy of spintronic sensors because a small sensed field is sufficient to order the spins in a superparamagnetic material. More accurate sensors are useful in a number of applications including military, medical, and biosensor.
NVE Notified of Grant of Two Patents Related to Laboratory-on-a-Chip Technology
NVE gains patents on spintronic magnetic workings
The Two-Axis Magnetic Field Sensor is patent number 7,054,114, and is the grant of a patent under the application published by the USPTO as number 2004-0137275. The invention is for a spintronic device that can detect the magnitude and orientation of magnetic fields. Applications for such devices might include Magnetoresitive Random Access Memory (MRAM), or military, industrial, and medical sensors.
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