Spintronics News, Resources & Information
Spintronics is the new science of computers and memory chips that are based on electron spin rather than (or in addition to) the charge (used in electronics). Spintronics is an exciting field that holds promise to build faster and more efficient computers and other devices
Researchers from the University of Chicago managed to line-up nuclear spins in a consistent and controllable way, on silicon-carbide, a high-performance and practical material. The technique uses light to polarize the spins - and is performed at room temperature.
Nuclear spins are normally randomly oriented, and the known methods of aligning them are complicated - and not entirely reliable. This is mostly because the spin of a nucleus is tiny - about 1,000 times smaller than the spin of an electron. The new technique is relatively simple and manages to align the spin of more than 99% spins in a Silicon Carbide nuclei.
Researchers from the University of Bath and international collaborators have developed a technology that enabled them to polarize valleys in silicon in the steady state, and demonstrated that valley polarization can make spin polarization easier. This may have useful implications towards building spintronics devices.
Researchers from Japan's Kyoto University and Osaka University have demonstrated that spin currents can travel more than half a micrometer on a thin doped-germanium sheet. Up until now this has only been demonstrated in very low temperatures (below 225 Kelvin).
Germanium has a higher electron mobility than silicon and a particular lattice symmetry that should reduce much of the electrons spin relaxation. But the material is not magnetic and so measuring spin transport is not easy because spin currents have to be created in a magnetic material and injected into germanium.
This book provides an introduction to spintronics-based ultra-low power and highly reliable computing. It discusses spintronics logic from device-level to the system-level, and includes information on magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods.
Researchers from France's Universite Paris-Sud and the CEA institute discovered that the probabilistic nature of Spin-Torque MRAM (STT-MRAM) devices can be used to create synapses-like neural system - effectively to create low-power devices that mimic the human's brain method of operation.
MRAM cells (or MTJs) store data using electrons magnetic spin, which is a stochastic switching type of device - that needs to apply a current for a long-enough time to make sure the information changed as you wish. In this new suggestion, you take advantage of the stochastic switching and apply current for a short time - which can be used to make the device learn progressively. This effectively means that MTJs can be "trained" to learn new information.
The Singapore's National Research Foundation (NRF) announced a new S$5 million ($3.7 million USD) fund to support Spintronics industry collaborations with research institutes in Singapore.
Last year the National University of Singapore together with Nanyang Technological University launched a new consortium (the Singapore Spintronics Consortium, or SG-SPIN), with an aim to encourage collaborative research partnerships between industry and the academia. The new $3.7 million fund will support existing and new SG-SPIN projects.
This book covers the aspects of theoretical and experimental approaches for silicon based spintronic materials. The theory parts emphasize on two first-principles methods - the GW method to improve the insulating gaps of the half metals which are a class of materials ideal for spintronic applications, and the linear response theory to calculate electric and magnetic susceptibilities.