Graphene discovered to have a unique spin relaxation mechanism

Researchers at the Spanish ICN2 Theoretical and Computational Nanoscience Group discovered that graphene has an unprecendented spin relaxation mechanism for non-magnetic samples. This may hold great promise for spintronics applications such as MRAM memory.

This mechanism is unique to graphene and may enable manipulating spin degree of freedom in future information-processing technologies.

Zigzag-edged graphene nanoribbons suitable for spintronics applications

A zigzag-edged graphene nanoribbon is the most magnetic type - and these ribbons are considered the most suitable ones for spintronics applications. Researchers from UCLA and Tohoku University developed a new self-assembly method to fabricate pristine zigzag graphene nanoribbons.

The researchers say they can control the ribbons length, edge configuration and location on the substrate.

A new topological insulator may enable fast spintronics devices

Researchers from the University of Utah developed a new topological insulator made from bismuth metal deposited on silicon. This material may be very suitable for quantum computers and fast spintronic devices.

This new material has the largest energy gap ever predicted. It can also be used alongside silicon so this material may be relatively easy to be used alongside current semiconductor technology.

NRL scientists report the highest spin injection values yet measured for graphene

Researchers from the US Naval Research Laboratory (NRL) developed a new type of tunnel device structure in which both the tunnel barrier and transport channel are made from graphene. The researchers say that this device features the highest spin injection values yet measured for graphene, and this design could pave they way towards highly functional and scalable graphene electronic and spintronic devices.

The tunnel barrier is made from dilutely fluorinated graphene while the charge and transport layer is made from graphene. The researcher demonstrated tunnel injection through the fluorinated graphene, and lateral transport and electrical detection of pure spin current in the graphene channel.

Graphene can filter electrons according to the direction of their spin

Researchers from MIT discovered that under a powerful magnetic field and at very low temperatures, graphene can filter electrons according to the direction of their spin. This is something that cannot be done by any conventional electronic system - and may make graphene very useful for quantum computing.

it is known that when a magnetic field is turned on perpendicular to a graphene flake, current flows only along the edge, and in one direction (clockwise or counterclockwise, depending on the magnetic field orientation), while the bulk graphene sheet remains insulating. This is called the Quantum Hall effect.

Folding graphene in a fin-like structure opens a bandgap and produces a spin-polarized current

Researchers from the US, Singapore, Brazil and Ireland have theoretically shown that if you fold a graphene sheet in a fin-like structure and expose it to a magnetic field you open up a bandgap. This will also produce spin-polarized current, which should make it useful in Spintronics applications.

The researchers say that this folding can be easily achieved by depositing graphene on a substrate with periodic trenches.

Grain boundaries in certain 2D materials create nano magnets

Researchers from Rice University calculated that imperfections in certain 2D materials create the conditions by which nanoscale magnetic fields arise. According to the researchers this could lead towards new strategies in Spintronics research.

The researchers say that those grain boundaries in 2D semiconducting materials known as dichalcogenides (hybrids that combine transition metal and chalcogen atoms) can be magnetic. The researchers focused on molybdenum disulfide (MDS) grown using CVD. In graphene, the boundaries are weak points, but in dichalcogenides, they have unique properties, and they "squeeze magnetism out of nonmagnetic material".


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