Researchers from Spain discovered a way of using lead atoms and graphene to create a powerful magnetic field by the interaction of the electrons' spin with their orbital movement. The scientists believe that this discovery could come in handy for spintronics applications.
The researchers laid a layer of lead on a layer of graphene, grown over an iridium crystal. This way, the lead forms 'islands' below the graphene and the electrons of this 2D material behave as if in the presence of a huge 80-tesla magnetic field, which allows for the selective control of the flow of spins. The scientists also state that under these conditions certain electric states are immune to defects and impurities.
Researchers at the Spanish ICN2 Theoretical and Computational Nanoscience Group discovered that graphene has an unprecendented spin relaxation mechanism for non-magnetic samples. This may hold great promise for spintronics applications such as MRAM memory.
This mechanism is unique to graphene and may enable manipulating spin degree of freedom in future information-processing technologies.
A zigzag-edged graphene nanoribbon is the most magnetic type - and these ribbons are considered the most suitable ones for spintronics applications. Researchers from UCLA and Tohoku University developed a new self-assembly method to fabricate pristine zigzag graphene nanoribbons.
The researchers say they can control the ribbons length, edge configuration and location on the substrate.
Researchers from the University of Utah developed a new topological insulator made from bismuth metal deposited on silicon. This material may be very suitable for quantum computers and fast spintronic devices.
This new material has the largest energy gap ever predicted. It can also be used alongside silicon so this material may be relatively easy to be used alongside current semiconductor technology.
Researchers from the US Naval Research Laboratory (NRL) developed a new type of tunnel device structure in which both the tunnel barrier and transport channel are made from graphene. The researchers say that this device features the highest spin injection values yet measured for graphene, and this design could pave they way towards highly functional and scalable graphene electronic and spintronic devices.
The tunnel barrier is made from dilutely fluorinated graphene while the charge and transport layer is made from graphene. The researcher demonstrated tunnel injection through the fluorinated graphene, and lateral transport and electrical detection of pure spin current in the graphene channel.
Researchers from MIT discovered that under a powerful magnetic field and at very low temperatures, graphene can filter electrons according to the direction of their spin. This is something that cannot be done by any conventional electronic system - and may make graphene very useful for quantum computing.
it is known that when a magnetic field is turned on perpendicular to a graphene flake, current flows only along the edge, and in one direction (clockwise or counterclockwise, depending on the magnetic field orientation), while the bulk graphene sheet remains insulating. This is called the Quantum Hall effect.
Researchers from the US, Singapore, Brazil and Ireland have theoretically shown that if you fold a graphene sheet in a fin-like structure and expose it to a magnetic field you open up a bandgap. This will also produce spin-polarized current, which should make it useful in Spintronics applications.
The researchers say that this folding can be easily achieved by depositing graphene on a substrate with periodic trenches.