New spintronics book: Non-Volatile In-Memory Computing by Spintronics

This book presents an an energy-efficient in-memory computing platform based on a spintronics design. It details the models of spin-transfer torque magnetic tunnel junction and racetrack memory and shows how spintronics could be a candidate for future data-oriented computing for storage, logic, and interconnect.

The book then describes an implementation of in-memory AES, Simon cipher and interconnect. Finally it demonstrates in-memory-based machine learning and face recognition algorithms.

Researchers demonstrate that thin-film Fe3O4 is a promising candidate for flexible spintronics

Nov 22, 2016

Researchers from National Chiao Tung University (NCTU) demonstrated that it is feasible to grow an epitaxial Fe3O4 film on a flexible muscovite. The thin film was characterized by several methods and found preserve the electrical and magnetic properties of Fe3O4. The researchers performed bending tests to confirm that the heterostructures retain the physical properties under repeated cycles. 

The researchers conclude their paper, saying that the material is a promising candidate for flexible spintronics devices, based on the tunneling magnetoresistance on the flexible muscovite.

A lateral electric field can control the spin polarization in zigzag graphene ribbons

Nov 16, 2016

Researchers from Grennole Alpes University in France have demonstrated using atomistic calculations that a lateral electric field can be used to tune the carrier mobility and change the spin polarization of the current driving through zigzag graphene ribbons. The researchers say that these effects can be nicely exploited in spintronics devices.

Spin polarization in ZGNR image

The calculations predict a high variation of the carrier mobility, mean free path and spin polarization in the ZGNRs. It turns out that configurations with almost 100% spin-polarized current can be switched on and off.

Researcher manufacture high quality tungsten disulfide with strong spin-orbit coupling

Nov 16, 2016

Researchers from New York University developed a new a new manufacturing process for tungsten disulfide that resulted in highest quality ever reported for the material. The process is based on chemical vapor deposition (CVD), with some "subtle yet critical" changes. 

Tungsten Disulfide photo

The high-quality material provided a large energy bandgap and its charge carriers had a small effective mass. The material also exhibited strong spin-orbit coupling, which means that it may be an interesting material for spintronics.

Multiferroic Rashba semiconductors - a new promising spintronics material class

Oct 23, 2016

Researchers from EPFL and PSI discovered a new material class, which they term multiferroic Rashba semiconductors, that have promising spintronics properties.

The researchers started with a study on the electronic and spin structure of a material made of thin films of Germanium and Tellurium (GeTe) doped with Manganese (Mn). Using photoemission, the researchers were able to study these materials for the first time. It was found that the combination of spin-orbit interaction and magnetism produces some exotic properties.