This book is focused on the spintronic properties of III–V nitride semiconductors, with detailed information on the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering.

The book also discusses topological insulators and electrically driven zero-magnetic-field spin splitting of surface electrons.The book is intended for graduate students and may serve as an introductory course in this specific field of solid-state theory and applications.

Image of Wide Bandgap Semiconductor Spintronics
Manufacturer: Pan Stanford
Part Number: 9789814669702
Price: $160.00