NIST researchers develop an efficient spin valve / memristor device

Researchers from the NIST were granted a patent for a device that combines a spin valve with a memristor (a device that is the basis of next-generation RRAM memory devices). The device can be used to turn on and off a spin channel.

The researchers say that their patented device may be a fundamental building-block in future spintronic devices as it combines the non-volatile memory in memristors with the technology of a spin valve. The intention is simple and can be used in several ways - as an on/off switch for spin currents, as an interconnect between different spintronic components and as an interface between magnetic and electronic features.

C-SPIN researchers discuss topological insulators

The University of Minnesota (UMN) published yet another video, interviewing several researchers at the Center for Spintronic Materials, Interfaces, and Novel Architectures (C-SPIN). The topic this time is topological insulators - priming new class of materials.

Topological insulators are materials in which the edges are conductive but the rest of the material acts like an insulator).