NIST researchers develop an efficient spin valve / memristor device

Apr 28, 2017

Researchers from the NIST were granted a patent for a device that combines a spin valve with a memristor (a device that is the basis of next-generation RRAM memory devices). The device can be used to turn on and off a spin channel.

The researchers say that their patented device may be a fundamental building-block in future spintronic devices as it combines the non-volatile memory in memristors with the technology of a spin valve. The intention is simple and can be used in several ways - as an on/off switch for spin currents, as an interconnect between different spintronic components and as an interface between magnetic and electronic features.

C-SPIN researchers discuss topological insulators

Aug 23, 2016

The University of Minnesota (UMN) published yet another video, interviewing several researchers at the Center for Spintronic Materials, Interfaces, and Novel Architectures (C-SPIN). The topic this time is topological insulators - priming new class of materials.

Topological insulators are materials in which the edges are conductive but the rest of the material acts like an insulator).