BiSb films feature a colossal spin hall effect and high electrical conductivity

Researchers from the Tokyo Institute of Technology have developed a new thin film material made from bismuth-antimony (BiSb) that is a topological insulator that simultaneously achieves a colossal spin Hall effect and high electrical conductivity.

This material could be used as the basis of spin-orbit torque MRAM (SOT-MRAM). SOT-MRAM SOT-MRAM can overcome the limitation of spin-transfer torque in MRAM memories - and provide a much faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed.

Researchers find multi-layered Co/Ni films highly desirable materials for effective spin transfer torque

Researchers from the University of Lorraine in France report that following a comprehensive characterization of multilayers of cobalt (Co) and nickel (Ni), the material holds great promise for memory applications based on spin transfer torque (STT-MRAM).

Multi layered cobalt and nickel films for spintronics

It was already shown before that Co/Ni multilayers have very good properties for spintronics applications, but up until now it wasn't clear if the films have a sufficiently large intrinsic spin polarization, which is necessary to create and maintain spin-polarized currents in spintronic devices. It was now shown that the films have a spin polarization of about 90% - which is similar to the best spintronic materials.

Researchers develop an all-electric method to measure the spin texture of topological insulators

Researchers from Singapore's NUS and the University of Missouri developed a new all-electric method to measure the spin texture of topological insulators. The researchers say that this method could lead to an easier (and cheaper) methods of developing spintronics devices.

Spin Texture measurements of Topological Insulators (NUS)

The new work revealed a close relation between the spin texture of topological surface states (TSS) and a new kind of magneto-resistance. The researchers observed the second order nonlinear magneto-resistance in a prototypical 3D TI Bi2Se3 films, and showed that it is sensitive to TSS. In contrast with conventional magneto-resistances, this new magneto-resistance shows a linear dependence on both the applied electric and magnetic fields.

Zero-Field Switching effect discovered in cobalt-iron-boron

Researchers from Johns Hopkins University and the US NIST discovered that magnetisation in a cobalt-iron-boron layer could be flipped between stable states using only electric current, without an external magnetic field. The researchers call this effect Zero-Field Switching (ZFS).

ZFE in cobalt-iron-boron layer (JHU / NIST)

The researchers say that this effect was not theoretically predicted, as all previous devices of this type have required a magnetic field or other more complex measures to change the material's magnetisation.

Researchers develop a Magnon Spin Valve

Researchers from Johannes Gutenberg University Mainz (JGU), the University of Konstanz and Tohoku University developed a spin-valve structure based on several ferromagnets - which can detect the efficiency of magnon currents depending on the magnetic configuration of the device.

Magnon Spin valve (Tohoku JGU)

The researchers say that this is a new "building block" for Magnon Spintronics, and this kind of device could be used to the transmission or blocking of incoming spin information.

Spin Caloritronics explored for DNA molecules

Spin caloritronics is a new emerging field that explores how heat currents transport electron spin. One interesting application in this field is the use of waste heat to create spintronics devices that do not require any external power to operate.

dsDNA sandwiched between a nonmagnetic metal (NM) and a ferromagnet (FM) one (photo: CUMT)

The thermally driven transport application of spin caloritronics is based on the Seebeck effect - which takes use of the temperature difference between a ferromagnet (FM) and a nonmagnetic metal (NM) to create a thermoelectric voltage.

Researchers from MIPT design a new spin diode

Researchers from the Moscow Institute of Physics and Technology (MIPT) designed a new spin diode, using two kinds of antiferromagnetic materials. The researchers say that this new design features triple the frequencies range under which the device can rectify alternating currents, while keeping the same sensitivity as semiconductor-based diodes.

Spin Diode Design (MIPT)

The spin diode, in this new design, is placed between the two materials, and by adjusting the orientation of their antiferromagnetic axes, it is possible to change the resistance and the resonant frequency of the diode.

Researchers develop a magnons-based spin transistor

Researchers from the University of Groningen developed a spin transistor based on magnons (spin-waves). This transistor allows the researchers to alter the flow of spin waves through a magnet - with only an electrical current.

Magnon transistor schematics (Groningen University)

To create the transistor, the researchers used films of platinum that inject magnons into a magnet made of Yttrium Iron Garnet (YIG). A third platinum strip, inserted between the injector and detector allows the researchers to either inject additional magnons in the conduction channel or drain magnons from it.

Researchers modify graphene to make the material both magnetic and with spin-orbit interaction

Researchers from Russia, Germany and Spain managed to modify graphene to make the material both magnetic and with spin-orbit interaction, for the first time. This could make graphene suitable for quantum computers.

Graphene with the properties of cobalt and gold image

To achieve these new properties, the researchers combined graphene with gold and cobalt. The spin-orbit interaction, unlike in gold, is extremely small in graphene. The interaction between graphene and gold increases the spin-orbit interaction in graphene, while interaction between graphene and cobalt induced magnetism.