Researcher use a quantum-dot material to continuously read out the state of a single electron spin

May 19, 2017

Researchers from the Institut Néel in France and the Karlsruhe Institute of Technology in Germany developed a non-destructive method to continuously read out the state of a single electron spin. The technique is based on the exchange interaction between the spin and a nearby readout quantum dot.

TbPc2 spin transistor render

The quantum-dot material is made from a single terbium-two phthalocyanine ligands (Tb-Pc2) molecular magnet embedded in transistor geometry. The QD is cooled down to 40 mK, and at that temperature it can be used to measure electron transport through the ligands, which behave as a readout quantum dot.

Researcher discover a 2D material that possessed an intrinsic ferromagnetism.

Apr 30, 2017

Researchers from the DoE's Lawrence Berkeley National Laboratory discovered that 2-D chromium germanium telluride (CGT) feature an intrinsic ferromagnetism. Up until now it was not clear whether magnetism could survive in such thin materials - but this discovery proved that it could of course.

Detecting electron spin in CGT, Berkeley

The CGT flakes were produced using exfoliating (the scotch-tape method, the same one used to produce graphene in Manchester in 2004). This discovery can lead to extremely thin spintronic devices.

NIST researchers develop an efficient spin valve / memristor device

Apr 28, 2017

Researchers from the NIST were granted a patent for a device that combines a spin valve with a memristor (a device that is the basis of next-generation RRAM memory devices). The device can be used to turn on and off a spin channel.

The researchers say that their patented device may be a fundamental building-block in future spintronic devices as it combines the non-volatile memory in memristors with the technology of a spin valve. The intention is simple and can be used in several ways - as an on/off switch for spin currents, as an interconnect between different spintronic components and as an interface between magnetic and electronic features.

Germanium found to feature strong spin hall effect and spin accumulation over long distances

Apr 26, 2017

Researchers from the Polytechnic University of Milan discovered that germanium features a very strong spin hall effect and spin accumulation over long distances Germanium interfaces easily with silicon which means that it could be a strong candidate for future spintronics devices.

The team fabricated a 100-by-250-micrometer germanium rectangle doped with phosphorous on a silicon surface. Driving a current int he long dimension, the spin hall effect was measured by detecting the accumulated spin density vs position across the short direction (spin-up electrons should accumulate at one edge and spin-down at the opposite edge).

Topological insulators can be used to create "spin batteries"

Apr 20, 2017

Researchers from Purdue University have demonstrated how topological insulators can be used to create rechargeable "spin batteries". The demonstration showed how spin momentum locking can retain the spin even after two days without current.

Persistent spin polarization measurement

Spin momentum locking is an effect in topological insulators in which the spin of the electrons on the edge of the material change their spin when current is applied.

Researchers achieve magnetic switching using domain wall displacement

Apr 17, 2017

Researchers from Helmholtz-Zentrum Berlin managed to develop a robust and reliable magnetization switching process using domain wall displacement - without any applied field. This could lead to highly efficient spintronics memory devices.

Magnetic switching by domain wall displacement (HZB photo)

A spintronics memory design that uses tiny rings to enable two stable magnetization states - but the switching of the states usually requires a circular magnetic field. The researchers now devised a way to overcome to requirement - by using slightly displaced holes in the rings (which are thus thinner on one side), which means that a short uniaxial magnetic field pulse can switch between the two possible vortex states.

Researchers develop a spin-resolved oscilloscope

Mar 14, 2017

Researchers from the Tokyo Institute of Technology and Nippon Telegraph and Telephone Corporation developed a measurement instrument for plasmonics and spintronics. The so-called "spin-resolved oscilloscope" is seen as a step towards future "spin-plasmonics" devices that can achieve ultra-high-speed and low-energy-consumption.

Spin resolved oscilloscope scheme (TIT 2017)

The spin-resolved oscilloscope is composed of a spin filter and nanometer-scale time-resolved charge detectors. The spin filter separates the spin-up and -down electrons, while the time-resolved charge detector measures the waveforms of the charge-density waves. By combining these spintronic and plasmonic devices, the spin-resolved oscilloscope is established. The new device enables the measurement of the waveforms of both charge and spin signals in electronic devices. The charge signal is the total charge of the spin-up and -down electron densities, while the spin signal is the difference between the spin-up and -down electron densities.