NIST researchers develop an efficient spin valve / memristor device

Researchers from the NIST were granted a patent for a device that combines a spin valve with a memristor (a device that is the basis of next-generation RRAM memory devices). The device can be used to turn on and off a spin channel.

The researchers say that their patented device may be a fundamental building-block in future spintronic devices as it combines the non-volatile memory in memristors with the technology of a spin valve. The intention is simple and can be used in several ways - as an on/off switch for spin currents, as an interconnect between different spintronic components and as an interface between magnetic and electronic features.

A spin torque-generated nano-droplet (magnetic Soliton) created for the first time

Researchers from the Swedish KTH Royal Institute Technology have managed to create a magnetic Soliton (spin torque-generated nano-droplet). This magnetic nano-droplet was theorized over 30 years ago, but was finally created now. The researchers say that such devices can have many applications, for example to replace microwave technology used in mobile phones with a much smaller, efficient and cheap component.

Solitons (solitary waves that behave like particles and retain their shape when moving at a constant speed) have been used before for long distance, high speed information transmission. This is the first time a Soliton was created in a magnetic environment. The droplet the researchers developed is about 50-100 m in size. At their center, magnetization points towards the opposite direction, both against the surrounding spin (a quantum physical property) and the applied magnetic field.

NVE got a new "spintronic biosensor technology" patent

NVE Corporation has been notified by the U.S. Patent and Trademark Office of the expected grant today of a patent relating to spintronic biosensor technology, which could be used in laboratory-on-a-chip systems. The patent is number 7,446,524 and titled "Method for detecting magnetic particles in a fluid using thin-film magnetic field sensor."

NVE Notified of Two Spintronics Patent Grants

NVE Corporation has been notified by the U.S. Patent and Trademark Office of the expected grant today of two patents relating to spintronics.

The first patent is number 7,390,584 and titled "Spin dependent tunneling devices having reduced topological coupling." Spin-dependent tunnel junctions, also known as magnetic tunnel junctions or tunneling magnetic junctions, are spintronic structures that can form the heart of spintronic magnetoresistive random access memory technology, commonly known as MRAM.

The second patent is number 7,391,091 and titled "Magnetic particle flow detector," and is related to spintronic biosensor technology, which could be used in laboratory-on-a-chip systems.

NVE Notified of Patent Grant for Superparamagnetic Devices

NVE Corporation has been notified by the U.S. Patent and Trademark Office of the expected grant today of patent number 7,355,822, titled "Superparamagnetic Devices" and assigned to NVE.
 
Superparamagnetism is the magnetic state of a material between highly ordered parallel spins (ferromagnetism) and randomly ordered spins (paramagnetism). The superparamagnetic effect occurs in ferromagnetic structures smaller than a critical value or at temperatures higher than a critical temperature.
 
Superparamagnetism can improve the accuracy of spintronic sensors because a small sensed field is sufficient to order the spins in a superparamagnetic material. More accurate sensors are useful in a number of applications including military, medical, and biosensor.

NVE gains patents on spintronic magnetic workings

NVE Corporation said that it has been notified by the U.S. Patent and Trademark Office (USPTO) that two patents are expected to be granted today. The patents are titled "Two-Axis Magnetic Field Sensor" and "Superparamagnetic Devices."

The Two-Axis Magnetic Field Sensor is patent number 7,054,114, and is the grant of a patent under the application published by the USPTO as number 2004-0137275. The invention is for a spintronic device that can detect the magnitude and orientation of magnetic fields. Applications for such devices might include Magnetoresitive Random Access Memory (MRAM), or military, industrial, and medical sensors.