Researchers use graphene and other 2D materials to create a spin field-effect transistor at room temperature
Researchers at CIC nanoGUNE BRTA in Spain and University of Regensburg in Germany have recently demonstrated spin precession at room temperature in the absence of a magnetic field in bilayer graphene. In their paper, the team used 2D materials to realize a spin field-effect transistor.
Sketch of the spin field-effect transistor. Image from article
Coherently manipulating electron spins at room temperature using electrical current is a major goal in spintronics research. This is particularly valuable as it would enable the development of numerous devices, including spin field-effect transistors. In experiments using conventional materials, engineers and physicists have so far only observed coherent spin precession in the ballistic regime and at very low temperatures. Two-dimensional (2D materials), however, have unique characteristics that could provide new control knobs to manipulate spin procession.