Electric ferromagnetism at room temperature shown in cobalt-doped titanium dioxide

Researchers from Japan managed to induce and control magnetization in a ferromagnetic semiconductor (cobalt-doped titanium dioxide) at room temperature. This is another step towards room-temperature Spintronics.

The researchers constructed an electric double-layer transistor structure (see above) which uses a liquid electrolyte as a gate insulator, in which a small applied voltage is sufficient to generate a very high electric field.

Scientists created a new Spintronics material

Scientists from UCLA say they created a new class of material with magnetic properties in a dilute magnetic semiconductor (DMS) system. By using a type of quantum structure, they've been able to push the ferromagnetism above room temperature. 

Ferromagnetic coupling in DMS systems, the researchers say, could lead to a new breed of magneto-electronic devices that alleviate the problems related to electric currents. The electric field–controlled ferromagnetism reported in this study shows that without passing an electric current, electronic devices could be operated and functioning based on the collective spin behavior of the carriers. This holds great promise for building next-generation nanoscaled integrated chips with much lower power consumption.

NVE gains patents on spintronic magnetic workings

NVE Corporation said that it has been notified by the U.S. Patent and Trademark Office (USPTO) that two patents are expected to be granted today. The patents are titled "Two-Axis Magnetic Field Sensor" and "Superparamagnetic Devices."

The Two-Axis Magnetic Field Sensor is patent number 7,054,114, and is the grant of a patent under the application published by the USPTO as number 2004-0137275. The invention is for a spintronic device that can detect the magnitude and orientation of magnetic fields. Applications for such devices might include Magnetoresitive Random Access Memory (MRAM), or military, industrial, and medical sensors.