Researchers from National Chiao Tung University (NCTU) demonstrated that it is feasible to grow an epitaxial Fe3O4 film on a flexible muscovite. The thin film was characterized by several methods and found preserve the electrical and magnetic properties of Fe3O4. The researchers performed bending tests to confirm that the heterostructures retain the physical properties under repeated cycles. 

The researchers conclude their paper, saying that the material is a promising candidate for flexible spintronics devices, based on the tunneling magnetoresistance on the flexible muscovite.