Researchers from the University of Utah developed a new topological insulator made from bismuth metal deposited on silicon. This material may be very suitable for quantum computers and fast spintronic devices.

This new material has the largest energy gap ever predicted. It can also be used alongside silicon so this material may be relatively easy to be used alongside current semiconductor technology.

There are several other topoligical insulators - for example Stanene (similar to graphene but with tin atoms) and Germanene (also a 2D material, made from Germanium atoms).

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