Controlling light-induced magnetization boundaries for next-generation spintronic devices
Researchers from CNRS, Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, and the Leibniz Institute for Crystal Growth have demonstrated that all-optical helicity-independent magnetization switching (AO-HIS) in spintronic materials is a spatially inhomogeneous process along the depth of nanometer-thin magnetic films, challenging the traditional view of uniform, local switching.
Using femtosecond soft X-ray spectroscopy on a 9.4 nm-thick Gd25Co75 alloy film within a layered heterostructure, they observed an ultrafast formation and downward propagation of a magnetization boundary at about 2,000 m/s, sweeping through the magnetic layer in roughly 4.5 ps.