Researchers discover a potential application of unwanted electronic noise in semiconductors
Researchers from Korea's Institute for Basic Science (IBS), China's National University of Defense Technology and Harvard University in the U.S have made a fascinating breakthrough that can potentially harness fluctuations in semiconductors caused by Random Telegraph Noise (RTN), a type of unwanted electronic noise that has long been a nuisance in electronic systems.
Led by Professor Lee Young Hee from IBS, the team reported that magnetic fluctuations and their gigantic RTN signals can be generated in a vdW-layered semiconductor by introducing vanadium in tungsten diselenide (V-WSe2) as a minute magnetic dopant.