NVENVE Corporation Reports Second Quarter Results10/25/2009NVE reports 4Q results - record revenues of 6.8M$07/23/2009
The main increase in revenue is due to a 22% increase in product sales and 311% increase in contract R&D revenue. NVE Introduces New TMR Angle Sensor04/01/2009Also known as Spin-Dependent Tunneling (SDT), Magnetic Tunnel Junction (MTJ), or Tunneling Magnetic Junction (TMJ), Tunneling Magnetoresistance is a spintronic quantum effect that produces a dramatic resistance change in a normally insulating layer, depending on the magnetic field and thus the predominant electron spin in a free layer. The new device has four TMR elements configured as an angle sensor with full quadrature sine and cosine outputs. NVE Corporation Reports Third Quarter Results, Working on Anti-Tamper MRAM01/22/2009
NVE reported a strong growth in contract R&D. In the conference call, Daniel Baker (company's CEO) said - "Most of the contracts that we're working on right now are related to anti-tamper MRAM". NVE got a new "spintronic biosensor technology" patent11/04/2008NVE Corporation Reports Second Quarter Results10/23/2008For the first six months of fiscal 2009, total revenue increased 9% to $10.6 million from $9.71 million for the first six months of fiscal 2008. The revenue increase was primarily due to a 10% increase in product sales to $9.42 million for the first half of fiscal 2009 from $8.58 million for the prior-year period. NVE Corporation Reports First Quarter Results07/24/2008"Product sales drove strong profits,'' said NVE President and Chief Executive Officer Daniel A. Baker, Ph.D. "Gross margin was 71% of revenue, operating margin 52%, pretax margin 58%, and net margin 39%.'' NVE Notified of Two Spintronics Patent Grants06/24/2008The first patent is number 7,390,584 and titled "Spin dependent tunneling devices having reduced topological coupling." Spin-dependent tunnel junctions, also known as magnetic tunnel junctions or tunneling magnetic junctions, are spintronic structures that can form the heart of spintronic magnetoresistive random access memory technology, commonly known as MRAM. The second patent is number 7,391,091 and titled "Magnetic particle flow detector," and is related to spintronic biosensor technology, which could be used in laboratory-on-a-chip systems. NVE Corporation Reports 4Q Results05/08/2008NVE Notified of Patent Grant for Superparamagnetic Devices04/10/2008Superparamagnetism is the magnetic state of a material between highly ordered parallel spins (ferromagnetism) and randomly ordered spins (paramagnetism). The superparamagnetic effect occurs in ferromagnetic structures smaller than a critical value or at temperatures higher than a critical temperature. Superparamagnetism can improve the accuracy of spintronic sensors because a small sensed field is sufficient to order the spins in a superparamagnetic material. More accurate sensors are useful in a number of applications including military, medical, and biosensor. |
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