You are here

Jan 30, 2009

Researchers in France and the US have lowered the current required for spin transfer down to just 120 microamps at room temperature for a device that measures 45 nm across.

Spin transfer is when the spin angular momentum of charge carriers (usually electrons) in a material is transferred from one place to another. In the MRAM industry, Spin Transfer might help to significantly reduce power consumption, but it draws a large current. But the new technique can help with that. 



Stéphane Mangin from Nancy University and colleagues may fabricated 45 nm diameter spin valves based on cobalt-nickel multilayer elements. Because these devices exhibit perpendicular anisotropy, they are thermally stable and require currents as low as 120 microamps for spin transfer switching without any applied magnetic field.

Source: