A team of
Korea Institute of Science and Technology (KIST) researchers led by Han
Suk-hee described the demonstration of a spin-injected field effect
transistor, which is based on a semiconducting channel with two
ferromagnetic electrodes.
The transistor's basic structure of
source, gate and drain is similar to the complementary
metal-oxide-semiconductor (CMOS) model used for making microprocessors
and other integrated circuits. However, Han's transistor is different
in that the source and drain are made of ferromagnetic materials and
that the injected spins are controlled by gate voltage.
Via
iStockAnalyst
