Korean researchers created the first first spin field-effect transistor

A team of Korea Institute of Science and Technology (KIST) researchers led by Han Suk-hee described the demonstration of a spin-injected field effect transistor, which is based on a semiconducting channel with two ferromagnetic electrodes.

The transistor's basic structure of source, gate and drain is similar to the complementary metal-oxide-semiconductor (CMOS) model used for making microprocessors and other integrated circuits. However, Han's transistor is different in that the source and drain are made of ferromagnetic materials and that the injected spins are controlled by gate voltage.