Japanese researchers working on Spintronics based ICs

A group led by Professor Hideo Ohno in the Laboratory of Nanoelectronics and Spintronics, at Tohoku University is working to develop new integrated circuits using spintronics. The ICs store data in nonvolatile memory using magnetism (MRAM), so their standby power can be made zero. This memory utilizes the tunnel magneto-resistance effect.