Spintronics books

Organic spintronics is a young field of research with ample current and future potential applications, including spin-valves used in reading and writing modes of magnetic information and memory devices, magnetic field effects on conductivity and electroluminescence, and optically detected magnetic resonance dynamics. The U.S. Department of Defense has invested half a million dollars to further the field of quantum spin-based electronics and the science behind this technology won the 2007 Nobel Prize in Physics. This book discusses in depth the latest discoveries in the field, including a look at the various materials and applications involved.

Since the spin-valve (SV) effect was first introduced in the beginning of 1990s, the giant/tunneling magnetoresistance (GMR/TMR) SV devices have been extensively used for building blocks of spintronics and magnetic information storage technology. The main purpose of this book is to provide concrete and well-organized core knowledge on SVs covering the general physics and theories elucidating magnetism, exchange bias, and GMR/TMR SV effects, the methodologies how to prepare and to characterize the SV materials, the applications of SV devices including magnetic recording read sensor, magnetic random access memory (MRAM), various spintronics devices, and the electrical and magnetic stability. The broad, deep, and state-of-art technical information provided by this book should help undergraduate/graduate students and the researchers to explore new scientifically challenges being faced in the field of magnetics, spintronics, and biomagnetics research areas.

Nanomagnetism and spintronics are two close subfields of nanoscience, explaining the effect of substantial magnetic properties of matter when the materials fabrication is realized at a comparable length size. Nanomagnetism deals with the magnetic phenomena specific to the structures having dimensions in the submicron range. The fact that the electronic transport properties of materials are dependent on the magnetic properties' artificial nanostructures, i.e., giant magnetoresistance (GMR) or tunneling magnetoresistance (TMR), has revolutionized spintronics science and technology. This book explains the concepts of nanomagnetism and spintronics by viewing the most recent research works from internationally distinguished research groups. Placing special emphasis on crucial fundamental and technical aspects of nanomagnetism and spintronics, it serves as a one-stop reference for universities offering postgraduate programs in nanotechnology or related disciplines.

Spintronics is a newly developing area in the field of magnetism, where the interplay of magnetism and transport phenomena is studied experimentally and theoretically. This book introduces the recent progresses in the researches relating to spintronics.

 

• From electronics to spintronics.
• Electron has not only charge but also spin
• Spin current is the key word for future devices.
• How peculiar are nanostructured magnetic systems?
• What is GMRH: From discovery to applications (in case that GMR got the Nobel prize in 2007)

Spin polarization, the difference in the number of spin-up and spin-down electrons, is an intrinsic property of ferromagnetic materials. Materials with high spin polarization have important technological implications for magnetoelectronic devices, e.g. devices that use magnetic tunnel junctions (MTJ), giant magnetoresistance (GMR) and/or magnetic random access memory, (MRAM). The fundamental physics of high spin polarization materials forms the basis for future technological applications.In this work, measurements of spin polarization have been performed on caxis gadolinium and dysprosium thin films, epitaxially grown on (11-20) sapphire substrates with a tungsten (110) seed layer. The values of spin polarization of caxis epitaxial gadolinium and dysprosium films were obtained using the point contact Andreev reflection (PCAR) technique with quantitative analyses.

Introduction to Spintronics is an accessible, organized, and progressive presentation of the quantum mechanical concept of spin. The authors build a foundation of principles and equations underlying the physics, transport, and dynamics of spin in solid state systems. They explain the use of spin for encoding qubits in quantum logic processors; clarify how spin-orbit interaction forms the basis for certain spin-based devices such as spintronic field effect transistors; and discuss the effects of magnetic fields on spin-based device performance.

Covers active hybrid spintronic devices, monolithic spintronic devices, passive spintronic devices, and devices based on the giant magnetoresistance effect

The spin degree of freedom is an intrinsically quantum-mechanical phenomenon, leading to both intriguing applications (such as quantum information storage and processing) and unsolved fundamental issues (such as "where does the proton spin come from"). The present volume investigates central aspects of modern spin physics in the form of  extensive lectures on semiconductor spintronics, the spin-pairing mechanism in high- temperature semiconductors, spin in quantum field theory and the nucleon spin.