Spintronics books

Handbook of Spin Transport and Magnetism provides a comprehensive, balanced account of the state of the art in the field known as spintronics. It reveals how key phenomena first discovered in one class of materials, such as spin injection in metals, have been revisited decades later in other materials systems, including silicon, organic semiconductors, carbon nanotubes, graphene, and carefully engineered nanostructures.

The first section of the book offers a historical and personal perspective of the field written by Nobel Prize laureate Albert Fert. The second section addresses physical phenomena, such as GMR, in hybrid structures of ferromagnetic and normal metals. The third section discusses recent developments in spin-dependent tunneling, including magnetic tunnel junctions with ferroelectric barriers. In the fourth section, the contributors look at how to control spin and magnetism in semiconductors. In the fifth section, they examine phenomena typically found in nanostructures made from metals, superconductors, molecular magnets, carbon nanotubes, quantum dots, and graphene. The final section covers novel spin-based applications, including advanced magnetic sensors, nonvolatile magnetoresistive random access memory (MRAM), and semiconductor spin-lasers.

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Handbook of Spin Transport and Magnetism

This book covers the main aspects of dynamic phenomena in confined magnetic structures so that researchers can find a comprehensive compilation of the current status in the field. Introductory chapters help newcomers to understand the basic concepts, and the more advanced chapters give the current state of the art for most spin dynamic issues in the milliseconds to femtoseconds range. Emphasis is placed on both the discussion of the experimental techniques and on the theoretical work. The comprehensive presentation of these developments makes this volume very timely and valuable for every researcher working in the field of magnetism.

It describes the new experimental techniques which have advanced this field very rapidly. Among the techniques covered, particular attention is given to those involving high temporal and spatial resolutions, down to the femtosecond and submicrometer regime, as well as to techniques involving magnetic field pulses with very short rise times and durations, and new detection schemes.

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Spin Dynamics in Confined Magnetic Structures I (Topics in Applied Physics)

The conjunction of charge manipulation in the semiconductor with the electron spin could lead to a whole new era in information technology, called semiconductor spintronics. In a spinFET device the conventional source/drain contacts are replaced by ferromagnetic (FM) electrodes, injecting and detecting spin-polarized current in silicon. The main advantage of this approach is the merge of information processing and storage in one device, employing a magneto-current effect that depends on the relative magnetization of the injector and detector electrode. The use of silicon as a host material for spin polarized current features a big advantage: its outstanding spin lifetime. The so-called conductivity mismatch between the FM contact and silicon is identified as major obstacle for spin injection, where the diodes' resistance area product has to match a narrow resistance window. In the present work the structural, electrical and magnetic properties of ferromagnetic Schottky diodes and MgO-based tunneling diodes have been investigated, employing CoFe/NiFe, NiFe and CoFeB ferromagnetic electrodes, different silicon doping densities and different post-deposition annealing conditions.

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Spin Injection in Silicon: Evaluation of sputter-deposited MgO-based tunneling diodes for silicon spintronics