Spintronics: computation and memory technology using electron spin

A research team led by Dr Alan Drew (University of Fribourg, Switzerland and Queen Mary, London) and Dr Elvezio Morenzoni (Paul Scherrer Institute – PSI, Switzerland) is the first one to have tracked the magnetic processes going on within a hard-drive read head – similar to the heads that read the data off computer hard discs.
In their experiment, the researchers implanted muons into their device. Muons are elementary particles that act like small magnets, and can thus show up the magnetic fields in their surroundings. The muons for this experiment were generated in the particle accelerator at PSI and subsequently subjected to heavy deceleration – PSI is the only location world-wide where this process is available. In the long term, this type of experiment will help us to understand the processes going on inside the read head in greater detail, so that engineers can see where they need to concentrate their efforts to optimise the heads.

MRAM-Info just published a great interview with Dr. Saied Teharni, Everspin's COO. Everspin is the world's leading MRAM company (spun off from Freescale), and are producing MRAM chips since 2006. Dr. Saied reveals plans for higher-density MRAM in 2009 - 16Mbit. Today's chips only go to 4Mbit. He also predicts that by 2015 MRAM will be able to compete with DRAM and FLASH (NOR) with densities.

MRAM is one of the most exciting Spintronics technologies, being commercialized today. 

Aviza Technology, a supplier of advanced semiconductor capital equipment and process technologies for the global semiconductor industry and related markets, today announced the introduction of StratIon(TM) fxP, the world's first 300-mm ready Ion Beam Deposition system.

Spin-induced torque is central to understanding experiments, from the measurement of angular momentum of photons to the measurement of the gyromagnetic factor of metals and a very miniaturized – about 6 microns -- version of a gyroscope that measures the torques produced by electrons changing their spin states. It can be used to uncover new spin-dependent fundamental forces in particle physics, according to Raj Mohanty, Boston University Associate Professor of Physics.

Grandis announced that it has been awarded $6.0 million from the Defense Advanced Research Projects Agency (DARPA) for the initial phase of research to develop spin-transfer torque random access memory (STT-RAM) chips (for the 45 nm technology node and beyond). The total value of the effort, if all phases of the development program are completed, could be up to $14.7 million over four years.

Physicists in the US are the first to segregate a Fermi gas of ultracold atoms according to their spin — with “spin-up” and “spin-down” atoms moving to opposite sides of the optical trap in which they were contained.

John Thomas and colleagues at Duke University found that about 60% of the lithium-6 atoms became segregated and that the spin-up and spin-down atoms remained apart for several seconds. However, they are puzzled as to why the segregation lasts much longer, and is more intense, than predicted by theory.

In his lab in one of the more venerable buildings at Berkeley Lab, Schenkel and his students have used a focused ion beam to implant single ions in devices mere millionths of a meter square. (An ion is an atom with net charge, typically lacking one or more electrons.)

"Single-atom effects have been observed before, but the yields are so low as to be impractical -- or the devices are randomly formed, with no control or predictability," Schenkel says. "Our approach to single-atom doping integrates ion beams with a modified scanning force microscope. We use the microscope's cantilever tip for both the nondestructive imaging of the target area and to position the ion beam."